Atomistic Modeling of Pocket Dopant Deactivation and Its Impact on $V_{\textrm {th}}$ Variation in Scaled Si Planar Devices Using an Atomistic Kinetic Monte Carlo Approach
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Published:2015-06
Issue:6
Volume:62
Page:1789-1795
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ISSN:0018-9383
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Container-title:IEEE Transactions on Electron Devices
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language:
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Short-container-title:IEEE Trans. Electron Devices
Author:
Noda Taiji,Vrancken Christa,Vandervorst Wilfried
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials