A nonvolatile memory based on reversible phase changes between fcc and hcp-Reference-Cited by-同舟云学术

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A nonvolatile memory based on reversible phase changes between fcc and hcp

Published:2005-05 Issue:5 Volume:26 Page:286-288
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Dong-Ho Ahn ,Dae-Hwan Kang ,Byung-ki Cheong ,Hyuk-Soon Kwon ,Min-Ho Kwon ,Tae-Yeon Lee ,Jeung-hyun Jeong ,Taek Sung Lee ,In Ho Kim ,Ki-Bum Kim

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/30787/01425684.pdf?arnumber=1425684

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