A power HEMT production process for high-efficiency Ka-band MMIC power amplifiers-Reference-Cited by-同舟云学术

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A power HEMT production process for high-efficiency Ka-band MMIC power amplifiers

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Container-title:15th Annual GaAs IC Symposium
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Author:

Biedenbender M.D.,Lee J.L.,Tan K.L.,Liu P.H.,Freudenthal A.,Streit D.C.,Luong G.,Lai R.,Aust M.V.,Allen B.,Lin T.S.,Yen H.C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx2/3147/8957/00394438.pdf?arnumber=394438

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MMICs in the millimeter-wave regime;IEEE Microwave Magazine;2009-02

2. Ka-band 1-W PHEMT MMIC power amplifiers on 2mil-thick GaAs substrates;Microwave and Optical Technology Letters;2005

3. A 6-W Ka-band power module using MMIC power amplifiers;IEEE Transactions on Microwave Theory and Techniques;1997

4. Method to determine forward gate capacitance of HFETs using resonance effect;Electronics Letters;1996

5. Novel W-band monolithic push-pull power amplifiers;IEEE Journal of Solid-State Circuits;1995

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