The benefits of fluorine in pnp polysilicon emitter bipolar transistors-Reference-Cited by-同舟云学术

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The benefits of fluorine in pnp polysilicon emitter bipolar transistors

Published:1994-07 Issue:7 Volume:41 Page:1249-1256
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Moiseiwitsch N.E.,Ashburn P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/7248/00293355.pdf?arnumber=293355

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental and Simulation Studies of Solid-Phase Crystallization of Fluorine-Implanted Amorphous Silicon on Silicon Dioxide;Japanese Journal of Applied Physics;2011-09-20

2. Experimental and Simulation Studies of Solid-Phase Crystallization of Fluorine-Implanted Amorphous Silicon on Silicon Dioxide;Japanese Journal of Applied Physics;2011-09-01

3. 1∕f noise in positive-negative-positive (PNP) polycrystalline silicon-emitter bipolar transistors;Journal of Applied Physics;2005-04-15

4. Realising high-current gain p-n-p transistors using a novel surface accumulation layer transistor (SALTran) concept;IEE Proceedings - Circuits, Devices and Systems;2005

5. Hot-carrier stressing of NPN polysilicon emitter bipolar transistors incorporating fluorine;IEEE Transactions on Electron Devices;2003-04

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