A first-principle assessment at atomistic scale of interface phenomena in down-scaling hafnium-based metal-insulator-metal diodes-Reference-Cited by-同舟云学术

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A first-principle assessment at atomistic scale of interface phenomena in down-scaling hafnium-based metal-insulator-metal diodes

Published:2022-07-06 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO)
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Author:

Laudadio Emiliano¹,Aldrigo Martino²,Stipa Pierluigi¹,Pierantoni Luca¹,Mencarelli Davide¹,Dragoman Mircea²,Modreanu Mircea³

Affiliation:

1. Marche Polytechnic University,Ancona,Italy,60131

2. IMT -Bucharest,Voluntari (Ilfov),Romania,077190

3. Tyndall National Institute-University College Cork, Lee Maltings,Dyke Parade,Cork,Ireland

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10038779/10038515/10038975.pdf?arnumber=10038975

Reference8 articles.

1. Distinctions between Supported Au and Pt Catalysts for CO Oxidation: Insights from DFT Study

2. QuantumATK: An integrated platform of electronic and atomic-scale modelling tools;smidstrup;J Phys Condens Matter,2019

3. Ferroelectricity in undoped hafnium oxide

4. Phase Properties of Different HfO2 Polymorphs: A DFT-Based Study

5. Advanced capabilities for materials modelling with Quantum ESPRESSO

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Applying the 12 Principles of Green Engineering in Low TRL Electronics: A Case Study of an Energy-Harvesting Platform;Sustainability;2023-07-19

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