A 189GHz three-stage super-gain-boosted amplifier with power gain of 10.7 dB/stage at near-fmaxfrequencies in 65nm CMOS
Author:
Affiliation:
1. University of Electronic Science and Technology of China,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10186107/10186112/10186169.pdf?arnumber=10186169
Reference8 articles.
1. A Study of Operating Condition and Design Methods to Achieve the Upper Limit of Power Gain in Amplifiers at Near- $f_{max}$ Frequencies
2. A CMOS 210-GHz Fundamental Transceiver With OOK Modulation
3. Analysis and Design of Lossy Capacitive Over-Neutralization Technique for Amplifiers Operating Near f MAX
4. A 173 GHz Amplifier With a 18.5 dB Power Gain in a 130 nm SiGe Process: A Systematic Design of High-Gain Amplifiers Above $f_{\max }/2$
5. Analysis and Design of Dual-Peak Gmax-Core CMOS Amplifier in D-Band Embedding a T-Shaped Network
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A D-Band OOK Transmitter With 50-GHz Bandwidth Achieving 32-Gbps Data Rate in 28-nm CMOS;IEEE Journal of Solid-State Circuits;2024-08
2. A 194-GHz Three-Stage Differential Driver Amplifier Utilizing a Three-Element Embedded Core at Near-fmax Frequencies in 65-Nm CMOS;IEEE Microwave and Wireless Technology Letters;2024-06
3. Analyze the Loss Utilization in Near- fmax Embedded Amplifiers Using Uniform 3-D Gain Space: The Super-Gain-Boosting Technique;IEEE Transactions on Microwave Theory and Techniques;2024-05
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