A 5.1 dBm 127–162 GHz Frequency Sextupler with Broadband Compensated Transformer-Based Baluns in 22nm FD-SOI CMOS-Reference-Cited by-同舟云学术

A 5.1 dBm 127–162 GHz Frequency Sextupler with Broadband Compensated Transformer-Based Baluns in 22nm FD-SOI CMOS

Published:2022-06-19 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
language:
Short-container-title:

Author:

Li Shuyang¹,Chen Wenhua¹,Li Xingcun¹,Wang Yunfan²

Affiliation:

1. Tsinghua University,Department of Electronic Engineering,China

2. University of Michigan,Ann Arbor,USA

Funder

The National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9862947/9862948/09863124.pdf?arnumber=9863124

Reference11 articles.

1. Triaxial Balun With Inherent Harmonic Reflection for Millimeter-Wave Frequency Doublers

2. A highly-efficient 138–170 GHz SiGe HBT frequency doubler for power-constrained applications

3. A 135-155 GHz 9.7%/16.6% DC-RF/DC-EIRP Efficiency Frequency Multiply-by-9 FMCW Transmitter in 28 nm CMOS

4. A +2.3dBm 124–158GHz Class-C frequency quadrupler with folded-transformer based multi-phase driving;chi;Proc IEEE Radio Freq Integr Circuits Symp (RFIC),0

5. A Wideband SiGe BiCMOS Frequency Doubler With 6.5-dBm Peak Output Power for Millimeter-Wave Signal Sources

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 5.5 dBm 125–140 GHz ×6 Frequency Multiplier Operating With -27 dBm Input Power in 28-nm CMOS;IEEE Microwave and Wireless Technology Letters;2024-07

2. A 192–229 GHz Frequency Tripler with 4.4 dBm Output Power Using Slotline-Based Drain Harmonic Shaping Technique in 40nm CMOS;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

3. A Compact D-Band Multiply-by-9 Frequency Multiplier with Inductor-Less Active Balun in 16nm p-FinFET Technology;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

4. A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs;IEEE Journal of Microwaves;2024-01

5. A 75-140 GHz Frequency Quadrupler with Milli-Watt Level Output Power in 22nm FDSOI;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18