An 8.2-10.2 GHz Digitally Controlled Oscillator in 28-nm CMOS Using Constantly-Conducting NMOS Biased Switchable Capacitor-Reference-Cited by-同舟云学术

An 8.2-10.2 GHz Digitally Controlled Oscillator in 28-nm CMOS Using Constantly-Conducting NMOS Biased Switchable Capacitor

Published:2022-06-19 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
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Author:

Wang Lantao¹,Meier Jonas¹,Bastl Johannes¹,Lauber Tim¹,Kollmann Andreas²,Mohlmann Ulrich²,Hanhart Michael¹,Meyer Alexander¹,Nardi Christopher¹,Wunderlich Ralf¹,Heinen Stefan¹

Affiliation:

1. RWTH Aachen University,Chair of Integrated Analog Circuits and RF Systems,Aachen,Germany

2. NXP Semiconductors,Hamburg,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9862947/9862948/09863152.pdf?arnumber=9863152

Reference8 articles.

1. Implicit Common-Mode Resonance in LC Oscillators

2. A 9.1–12.7 GHz VCO in 28nm CMOS with a bottom-pinning bias technique for digital varactor stress reduction;hershberg;ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC),0

3. A Low-Flicker-Noise 30-GHz Class-F23 Oscillator in 28-nm CMOS Using Implicit Resonance and Explicit Common-Mode Return Path

4. A 19.5-GHz 28-nm Class-C CMOS VCO, With a Reasonably Rigorous Result on 1/f Noise Upconversion Caused by Short-Channel Effects

5. A 12-GHz Transformer Feedback Class-F₂,₃ Voltage-Controlled Oscillator Using Noise Circulating With FoM of 190.5 dBc/Hz

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2. A 5.2GHz Trifilar Transformer-Based Class-F23 Noise Circulating VCO with FoM of 192.6 dBc/Hz;2023 IEEE Asian Solid-State Circuits Conference (A-SSCC);2023-11-05

3. A 20-GHz Multi-Core Digitally Controlled Oscillator with -118 dBc/Hz Phase Noise at 1MHz Offset in 28nm CMOS;2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME);2023-06-18