A DC-120 GHz SPDT Switch Based on 22 nm FD-SOI SLVT NFETs with Substrate Isolation Rings Towards Increased Shunt Impedance-Reference-Cited by-同舟云学术

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A DC-120 GHz SPDT Switch Based on 22 nm FD-SOI SLVT NFETs with Substrate Isolation Rings Towards Increased Shunt Impedance

Published:2022-06-19 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
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Author:

Rack M.¹,Nyssens L.¹,Courte Q.¹,Lederer D.¹,Raskin J.-P.¹

Affiliation:

1. Université catholique de Louvain,Belgium

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9862947/9862948/09863217.pdf?arnumber=9863217

Reference9 articles.

1. DC-40 GHz SPDTs in 22 nm FD-SOI and Back-Gate Impact Study

2. A compact, transformer-based 60 GHz SPDT RF switch utilizing diode-connected SiGe HBTs

3. A Traveling-Wave CMOS SPDT Using Slow-Wave Transmission Lines for Millimeter-Wave Application

4. W-band SPDT switches in planar and tri-gate 100-nm gate-length GaN-HEMT technology

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Circuits for 5G applications implemented in FD-SOI and RF/PD-SOI technologies;New Materials and Devices Enabling 5G Applications and Beyond;2024

2. W-Band Compact Balun-Embedded SPDT Switch With Leakage-Canceled Overlapped Transformers;IEEE Microwave and Wireless Technology Letters;2023-11

3. SPST and SPDT 60 GHz Travelling-Wave Switches in 22 nm FD-SOI;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

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