A LIF Neuron With Adaptive Firing Frequency Based on the GaSe Memristor
Author:
Affiliation:
1. School of Material Science and Engineering, Huazhong University of Science and Technology, Wuhan, China
2. Hubei Yangtze Memory Laboratories, Wuhan, China
Funder
Hubei Province Key Scientific and Technological Project
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10194493/10171222.pdf?arnumber=10171222
Reference29 articles.
1. GaSe oxidation in air: from bulk to monolayers
2. Emulating Nociceptive Receptor and LIF Neuron Behavior via ZrO x ‐based Threshold Switching Memristor
3. First-principles study of the structure and band structure of Ga2Se3
4. Oxidation dynamics of ultrathin GaSe probed through Raman spectroscopy
5. Artificial Neural Network (ANN) to Spiking Neural Network (SNN) Converters Based on Diffusive Memristors
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