Design of Dual-Directional SCR Structure With High Holding Voltage and Low Dynamic Resistance for High Voltage ESD Protection
Author:
Affiliation:
1. Design Enablement, Samsung Foundry, Samsung Electronics Company Ltd., Hwaseong-si, Republic of Korea
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10227840/10192472.pdf?arnumber=10192472
Reference17 articles.
1. A New Dual-Direction SCR With High Holding Voltage and Low Dynamic Resistance for 5 V Application
2. Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications
3. Anti-series GGNMOS ESD clamp for space application IC’s;linten;Proc Elect Overstress/Electrostatic Discharge Symp,2014
4. A New High Holding Voltage Dual-Direction SCR With Optimized Segmented Topology
5. ESD Protection Device and Circuit Design for Advanced CMOS Technologies
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1. Design and Manufacture of Dual-Gate DDSCR with High Failure Current and Holding Voltage;Chinese Journal of Electrical Engineering;2024-06
2. SCR Device Design with Ultra-Low Capacitance and Low Trigger Voltage;2024 IEEE 2nd International Conference on Control, Electronics and Computer Technology (ICCECT);2024-04-26
3. Ultra-low Capacitance Bidirectional SCR Device Design;2024 IEEE 2nd International Conference on Control, Electronics and Computer Technology (ICCECT);2024-04-26
4. Design of High-Robustness LDO Regulator With Floating SCR Based ESD Protection Circuit Using High Gain Buffer;IEEE Access;2024
5. ESD-Robustness Study of High-voltage N-channel LDMOSs with Vertically Embedded SCR and Discrete P+ SCR in the Drain Terminal;2023 IEEE 5th Eurasia Conference on IOT, Communication and Engineering (ECICE);2023-10-27
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