A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices-Reference-Cited by-同舟云学术

A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices

Published:2023-04 Issue:4 Volume:70 Page:1808-1814
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Buscemi F.¹^ORCID,Piccinini E.¹^ORCID,Vandelli L.¹,Nardi F.¹,Padovani A.²^ORCID,Kaczer B.³^ORCID,Garbin D.³^ORCID,Clima S.³^ORCID,Degraeve R.³^ORCID,Kar G. S.³,Tavanti F.⁴,Slassi A.⁴,Calzolari A.⁴^ORCID,Larcher L.¹^ORCID

Affiliation:

1. Applied Materials-MDLx Italy R&D, Reggio Emilia, Italy

2. DIEF, University of Modena and Reggio Emilia, Modena, Italy

3. IMEC, Leuven, Belgium

4. CNR-NANO, Istituto Nanoscienze, Modena, Italy

Funder

European H2020 Intersect Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10081247/10041806.pdf?arnumber=10041806

Reference26 articles.

1. Endurance improvement of more than five orders in Ge?Se??? OTS selectors by using a novel refreshing program scheme;hatem;IEDM Tech Dig,2019

2. A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From ${I}$ – ${V}$ , ${C}$ – ${V}$ , and ${G}$ – ${V}$ Measurements

3. A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks

4. Understanding of Tunable Selector Performance in Si-Ge-As-Se OTS Devices by Extended Percolation Cluster Model Considering Operation Scheme and Material Design

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1. Concurring effect of doping and composition on the thermodynamic properties of amorphous GexSe1-x alloys;Acta Materialia;2024-03

2. Chalcogenide Ovonic Threshold Switching Selector;Nano-Micro Letters;2024-01-11