Effect of parasitic inductances on the switching responses of eGaN HEMTs
Author:
Affiliation:
1. Université de Tunis El Manar,Ecole Nationale d'Ingénieurs de Tunis LR11ES15, Laboratoire des Systèmes Electriques,Tunis,Tunisie,1002
2. Société Alpha Technology,Ben Arous,Tunisie,2082
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10043831/10043859/10043917.pdf?arnumber=10043917
Reference12 articles.
1. A Universal SPICE Field-Effect Transistor Model Applied on SiC and GaN Transistors
2. Modeling of Wide Bandgap Power Semiconductor Devices—Part I
3. A Highly Integrated PCB Embedded GaN Full-Bridge Module With Ultralow Parasitic Inductance
4. Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses
5. GaN power devices for Electric Vehicles State-of-the-art and future perspective
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1. An eGaN HEMT-Based High Power Density Controller for Permanent Magnet Synchronous Motor;2023 26th International Conference on Electrical Machines and Systems (ICEMS);2023-11-05
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