20-THz Far-Infrared Imaging Using an Antenna-Coupled Schottky Barrier Diode in a Foundry CMOS-Reference-Cited by-同舟云学术

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20-THz Far-Infrared Imaging Using an Antenna-Coupled Schottky Barrier Diode in a Foundry CMOS

Published:2024-08 Issue:8 Volume:34 Page:1047-1050
ISSN:2771-9588
Container-title:IEEE Microwave and Wireless Technology Letters
language:
Short-container-title:IEEE Microw. Wireless Tech. Lett.

Author:

Pouya Behnam¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Texas Analog Center of Excellence, The University of Texas at Dallas, Richardson, TX, USA

Funder

Texas Instruments Incorporated Foundational Technology Research Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/9944983/10631739/10579907.pdf?arnumber=10579907

Reference15 articles.

1. Progress and Challenges Towards Terahertz CMOS Integrated Circuits

2. Far infrared and photonic components in complementary metal-oxide silicon technologies;Pouya,2022

3. Design and demonstration of antenna-coupled Schottky diodes in a foundry complementary metal-oxide semiconductor technology for electronic detection of far-infrared radiation

4. Exploration of Terahertz Imaging with Silicon MOSFETs

5. Monolithic 28.3 THz thermal image sensor incorporating 0.18-µm CMOS foundry

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electromagnetic–Thermal Far-Infrared Detection Using Arrays of Schottky Barrier Diode Detectors in a Foundry CMOS Tuned at 20 Terahertz;IEEE Sensors Letters;2024-07

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