Common-Gate LNA MMIC With Switching Feature Using GaN-HEMT for 5G RF Front-End-Reference-Cited by-同舟云学术

Common-Gate LNA MMIC With Switching Feature Using GaN-HEMT for 5G RF Front-End

Published:2023-10 Issue:10 Volume:33 Page:1446-1449
ISSN:2771-9588
Container-title:IEEE Microwave and Wireless Technology Letters
language:
Short-container-title:IEEE Microw. Wireless Tech. Lett.

Author:

Krishnaji Rao Megha¹^ORCID,Doerner Ralf²^ORCID,Chevtchenko Serguei A.²,Haque Sanaul¹^ORCID,Rudolph Matthias¹^ORCID

Affiliation:

1. Chair of Radio Frequency and Microwave Techniques—Ulrich-L.-Rohde Endowed Professorship, Brandenburg University of Technology (BTU), Cottbus, Germany

2. Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH), Berlin, Germany

Funder

Deutsche Forschungsgemeinschaft

German Bundesministerium für Bildung und Forschung [Federal Ministry of Education and Research (BMBF)] within the “Forschungsfabrik Mikroelektronik Deutschland (FMD)” Framework

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/9944983/10273759/10244187.pdf?arnumber=10244187

Reference8 articles.

1. GaN-HEMT Based Common-Gate LNA MMIC with Integrated Switch for Compact 5G Transceivers

2. Analysis of the Survivability of GaN Low-Noise Amplifiers

3. A C-Band GaN Single Chip Front-End for SAR Applications

4. A GaN single chip front-end for C-band synthetic aperture radars

5. 28 GHz RF Front-End Structure Using CG LNA as a Switch

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