56% PAE mm-Wave SiGe BiCMOS Power Amplifier Employing Local Backside Etching-Reference-Cited by-同舟云学术

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56% PAE mm-Wave SiGe BiCMOS Power Amplifier Employing Local Backside Etching

Published:2024-08 Issue:8 Volume:34 Page:1023-1026
ISSN:2771-9588
Container-title:IEEE Microwave and Wireless Technology Letters
language:
Short-container-title:IEEE Microw. Wireless Tech. Lett.

Author:

Franzese Aniello¹^ORCID,Sutbas Batuhan¹^ORCID,Hasan Raqibul¹^ORCID,Malignaggi Andrea¹^ORCID,Mausolf Thomas¹,Maletic Nebojsa¹^ORCID,Wei Muh-Dey²^ORCID,Zhou Han³^ORCID,Fager Christian³^ORCID,Carta Corrado¹,Negra Renato²

Affiliation:

1. IHP–Leibniz-Institut für Innovative Mikroelektronik, Frankfurt, Germany

2. Chair of High Frequency Electronics, RWTH Aachen University, Aachen, Germany

3. Department of Microtechnology and Nanoscience (MC2), Chalmers University, Gothenburg, Sweden

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/9944983/10631739/10557577.pdf?arnumber=10557577

Reference13 articles.

1. A 30-GHz CMOS SOI Outphasing Power Amplifier With Current Mode Combining for High Backoff Efficiency and Constant Envelope Operation

2. 26.3 A mm-Wave Power Amplifier for 5G Communication Using a Dual-Drive Topology Exhibiting a Maximum PAE of 50% and Maximum DE of 60% at 30GHz

3. A 42–46.4% PAE continuous class-F power amplifier with Cgd neutralization at 26–34 GHz in 65 nm CMOS for 5G applications

4. A Broadband Linear Ultra-Compact mm-Wave Power Amplifier With Distributed-Balun Output Network: Analysis and Design

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