120 GBd 2.8 <i>V</i> <sub>pp,diff</sub> Low-Power Differential Driver for InP Mach–Zehnder Modulator Using 55-nm SiGe HBTs-Reference-Cited by-同舟云学术

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120 GBd 2.8 V _pp,diff Low-Power Differential Driver for InP Mach–Zehnder Modulator Using 55-nm SiGe HBTs

Published:2023-06 Issue:6 Volume:33 Page:871-874
ISSN:2771-9588
Container-title:IEEE Microwave and Wireless Technology Letters
language:
Short-container-title:IEEE Microw. Wireless Tech. Lett.

Author:

Choi Jung Han¹^ORCID,Nijanandi Nisarg¹^ORCID

Affiliation:

1. Fraunhofer Heinrich-Hertz Institute, Berlin, Germany

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/9944983/10144809/10121705.pdf?arnumber=10121705

Reference13 articles.

1. Linear Large-Swing Push–Pull SiGe BiCMOS Drivers for Silicon Photonics Modulators

2. A DC-90-GHz 4- $V_{\mathrm{ pp}}$ Modulator Driver in a 0.13- $\mu \text{m}$ SiGe:C BiCMOS Process

3. SiGe BiCMOS linear modulator drivers with 4.8-Vpp differential output swing for 120-GBaud applications

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Linear Modulator Driver With Over 70-GHz Bandwidth 21.8-dB Gain and 3.4-Vppd Output Swing for Beyond 120-GBd Optical Links;IEEE Transactions on Microwave Theory and Techniques;2023

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