Optimizing polysilicon thin-film transistor performance with chemical-mechanical polishing and hydrogenation-Reference-Cited by-同舟云学术

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Optimizing polysilicon thin-film transistor performance with chemical-mechanical polishing and hydrogenation

Published:1996-11 Issue:11 Volume:17 Page:518-520
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chan A.B.Y.,Nguyen C.T.,Ko P.K.,Man Wong ,Kumar A.,Sin J.,Wong S.S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/11693/00541767.pdf?arnumber=541767

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Trend transformation of drain-current degradation under drain-avalanche hot-carrier stress for CLC n-TFTs;Microelectronics Reliability;2009-08

2. Single-grain thin-film transistor using Ni-mediated crystallization of amorphous silicon with a silicon nitride cap layer;Applied Physics Letters;2003-12-15

3. Effect of interface roughness on gate bias instability of polycrystalline silicon thin-film transistors;Journal of Applied Physics;2002-10-15

4. Ultrathin Oxide Grown on Polysilicon by Using an Electron Cyclotron Resonance N2O Plasma;Journal of the Korean Physical Society;2000-12-01

5. Laser Crystallization for Polycrystalline Silicon Device Applications;Technology and Applications of Amorphous Silicon;2000

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