1.1 kV vertical p-i-n GaN-on-sapphire diodes
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8424808/8442143/08442240.pdf?arnumber=8442240
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 1 kV Vertical P-i-N Diodes Based on Ultra-Wide Bandgap Al0.47Ga0.53N Grown by MOCVD;IEEE Electron Device Letters;2024-08
2. Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm2;IEEE Journal of the Electron Devices Society;2024
3. Thermal management of vertical GaN transistors;2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2023-04-17
4. GaN:Be I-Layer-Based High-Power p-i-n Diodes Achieving Large Quasi-Vertical MBE Breakdown Performance;IEEE Transactions on Electron Devices;2022-05
5. Selective-area growth study of GaN micropillars for quasi-vertical Schottky diodes;Semiconductor Science and Technology;2021-02-05
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