Optimization of AlN and AlScN Film ICP Etching
Author:
Funder
Natural Science Foundation of Shanghai
National Science Foundation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9375130/9375148/09375464.pdf?arnumber=9375464
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Patterning of Sc0.3Al0.7N Film for Piezoelectric MEMS Devices;2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF);2023-07-23
2. Etching of scandium-doped aluminum nitride using inductively coupled plasma dry etch and tetramethyl ammonium hydroxide;MRS Advances;2023-07-06
3. Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution;Nanomaterials;2023-01-09
4. Aluminum Nitride Thin Film Based Reconfigurable Integrated Photonic Devices;IEEE Journal of Selected Topics in Quantum Electronics;2023
5. Multiferroic Magnetic Sensor Based on AlN and Al0.7Sc0.3N thin film $S$;2021 IEEE International Ultrasonics Symposium (IUS);2021-09-11
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