Novel Guard Ring Structure formed by Self-align Trench Implant in SiC MOSFET-Reference-Cited by-同舟云学术

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Novel Guard Ring Structure formed by Self-align Trench Implant in SiC MOSFET

Published:2023-08-27 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
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Author:

Yu Wei-Chen¹,Hong Chia-Long¹,Tu Chang-Ching¹,Hsiao Yi-Kai¹,Kuo Hao-Chung²

Affiliation:

1. Hon Hai Research Institute,Semiconductor Research Center,Taipei,Taiwan,11492

2. Institute of Electro-Optical Engineering, College of Electrical and ComputerEngineering National Yang Ming Chiao Tung University,Department of Photonics,Hsinchu,Taiwan,30010

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10261884/10261892/10261909.pdf?arnumber=10261909

Reference11 articles.

1. Trench Multiple Floating Limiting Rings Termination for 4H-SiC High-Voltage Devices

2. Multizone Gradient-Modulated Guard Ring Technique for Ultrahigh Voltage 4H-SiC Devices With Increased Tolerances to Implantation Dose and Surface Charges

3. Novel SiC/Si Heterojunction Power MOSFET With Breakdown Point Transfer Terminal Technology by TCAD Simulation Study

4. SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors

5. Busbar Design and Optimization for Voltage Overshoot Mitigation of a Silicon Carbide High-Power Three-Phase T-Type Inverter

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