High-gain lateral bipolar action in a MOSFET structure-Reference-Cited by-同舟云学术

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High-gain lateral bipolar action in a MOSFET structure

Published:1991 Issue:11 Volume:38 Page:2487-2496
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Verdonckt-Vandebroek S.,Wong S.S.,Woo J.C.S.,Ko P.K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/3091/00097413.pdf?arnumber=97413

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