Microstructural Degradation Investigations of OFF-State Stressed 0.15 μm RF AlGaN/GaN HEMTs: Failure Mode related Breakdown-Reference-Cited by-同舟云学术

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Microstructural Degradation Investigations of OFF-State Stressed 0.15 μm RF AlGaN/GaN HEMTs: Failure Mode related Breakdown

Published:2021-11-07 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
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Author:

Sana Prabha¹,Graff Andreas¹,Simon-Najasek Michel²,Hhbner Susanne¹,Gao Veronica Zhan³,Rampazzo Fabiana³,De Santi Carlo³,Lambert Benoit⁴,Meneghesso Gaudenzio³,Zanoni Enrico³,Meneghini Matteo³,Altmann Frank¹

Affiliation:

1. Institute for Microstructure of Materials and Systems IMWS,Electronics Business Unit Fraunhofer,Halle,Germany,06120

2. Fraunhofer Institute for Microstructure of Materials and Systems IMWS,Halle,Germany,06120

3. University of Padova,Dept. of Information Engineering,Padova,Italy,35131

4. United Monolithic Semiconductor UMS Wilhelm-Runge-Straße 11,Ulm,Germany,89081

Funder

Ministry of Education

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9645059/9645074/09645151.pdf?arnumber=9645151

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