Thermal model of power semiconductor devices for electro-thermal circuit simulations

Author:

Igic P.M.,Mawby P.A.,Towers M.S.,Batcup S.

Publisher

IEEE

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Effects of Control Strategies on the Assessment of Power Converter Losses in Electric Vehicle Drivetrains;2023 IEEE Canadian Conference on Electrical and Computer Engineering (CCECE);2023-09-24

2. Full-Time Junction Temperature Extraction of IGCT Based on Electrothermal Model and TSEP Method for High-Power Applications;IEEE Transactions on Industrial Electronics;2021-01

3. Compact failure modeling for devices subject to electrostatic discharge stresses – A review pertinent to CMOS reliability simulation;Microelectronics Reliability;2015-01

4. Review of advanced IGBT compact models dedicated to circuit simulation;Facta universitatis - series: Electronics and Energetics;2014

5. Fast 3D thermal simulation of power module packaging;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2012-01-18

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