ESD Tolerance Improvement of Power Module using Clamp Diodes Built into Control IC-Reference-Cited by-同舟云学术

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ESD Tolerance Improvement of Power Module using Clamp Diodes Built into Control IC

Published:2023-05-23 Issue: Volume: Page:
ISSN:
Container-title:2023 Joint Asia-Pacific International Symposium on Electromagnetic Compatibility and International Conference on ElectroMagnetic Interference & Compatibility (APEMC/INCEMIC)
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Author:

Tadakuma Toshiya¹,Rogers Michael²,Sah Priyesh³,Ogawa Yuji⁴,Murakami Junichi⁵,Joko Motonobu¹

Affiliation:

1. Mitsubishi Electric Corporation,Power Semiconductor Device Dept.C.,Fukuoka,Japan

2. Mitsubishi Electric US,Inc.,Semiconductor & Device Division,Export,PA,USA

3. Mitsubishi Electric India Pvt., ltd.,Semiconductor & Device Division,Bengaluru,India

4. MELCO Semiconductor Engineering co., Ltd.,Design & Development Dept.A,Fukuoka,Japan

5. MELCO Semiconductor Engineering co., Ltd.,Quality Evaluation Engineering Dept.,Fukuoka,Japan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10217221/10217352/10217709.pdf?arnumber=10217709

Reference16 articles.

1. Indirect IGBT Over-Current Detection Technique Via Gate Voltage Monitoring and Analysis

2. IGBT module with user accessible on-chip current and temperature sensors

3. Physical Mechanism and Device Simulation on Transient-Induced Latchup in CMOS ICs Under System-Level ESD Test

4. On-Chip ESD Protection Design With Substrate-Triggered Technique for Mixed-Voltage I/O Circuits in Subquarter-Micrometer CMOS Process

5. Design of integrated current sensor for lateral IGBT power devices

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