Application of TVS Models for SEED Simulation of a Variety of TVS Devices
Author:
Affiliation:
1. Missouri University of Science and Technology,Missouri S&T EMC Laboratory,Rolla,USA
2. Nexperia GmbH,Germany
3. Graz University of Technology,SAL-Graz EMC lab,Graz,Austria
Funder
National Science Foundation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10217221/10217352/10217579.pdf?arnumber=10217579
Reference10 articles.
1. Improvement of SPICE based ESD Protection Models for I/O Protection Modeling
2. TVS Devices Transient Behavior Modeling Framework and Application to SEED
3. Transient Response of ESD Protection Devices for a High-Speed I/O Interface
4. A SPICE modeling of the negative resistance breakdown region for the bipolar junction transistor;dobrescu;Microelectronics,2000
5. A convergence robust method to model snapback for ESD simulation
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1. A Physics-Based Model for Snapback-Type ESD Protection Devices;IEEE Transactions on Electromagnetic Compatibility;2023-10
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