In/sub 0.5/(Al/sub x/Ga/sub 1-x/)/sub 0.5/ HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results-Reference-Cited by-同舟云学术

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In/sub 0.5/(Al/sub x/Ga/sub 1-x/)/sub 0.5/ HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

Published:1999 Issue:8 Volume:47 Page:1404-1412
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Yu-Chi Wang ,Jenn-Ming Kuo ,Fan Ren ,Lothian J.R.,Huan-Shang Tsai ,Weiner J.S.,Hao-Chung Kuo ,Chun-Hsiung Lin ,Young-Kai Chen ,Mayo W.E.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx5/22/16932/00780387.pdf?arnumber=780387

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The investigation for various treatments of InAlGaP Schottky diodes;Optical Materials;2003-07

2. Investigation of degradation mechanism of Schottky diodes;Solid-State Electronics;2003-05

3. High power density of AlGaAs/InGaAs doped-channel FETs with low DC power supply;Electronics Letters;2001

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