Extensive Study on Effect of Pinhole Induced Electric Field in Si CS-TOPCon Solar Cell
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9110268/9117802/09117863.pdf?arnumber=9117863
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Tunnel oxide thickness-dependent dominant carrier transport in crystalline silicon solar cells;Optical Materials;2024-08
2. Passivation in the c-Si Solar Cell to Enhance the Efficiency with Low Surface Recombination Velocity;Handbook of Emerging Materials for Semiconductor Industry;2024
3. C-si Passivated Contact Solar Cell With Optimized Efficiency Of 23.50% In AM1.5G Environment;2023 International Conference on Next Generation Electronics (NEleX);2023-12-14
4. A Detailed Theoretical Analysis of TOPCon/TOPCore Solar Cells Based on p-type Wafers and Prognosticating the Device Performance on Thinner Wafers and Different Working Temperatures;Silicon;2023-07-31
5. Fundamentals, present status and future perspective of TOPCon solar cells: A comprehensive review;Surfaces and Interfaces;2022-06
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