Fabrication and Characterization of SnO2/CH3NH3PbI3 based Photodetector
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/9110268/9117802/09117808.pdf?arnumber=9117808
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photo‐Induced Electrical Gating with the Inserting of an Interfacial Carrier Blocking Layer for Organic/Graphene Phototransistors;Advanced Optical Materials;2024-03-14
2. Photodetector based on Hybrid Perovskite CH3NH3PbI3/TiO2 Heterojunction;2023 9th International Conference on Signal Processing and Communication (ICSC);2023-12-21
3. Fabrication and characterization of Ag/PCDTBT/ZnO QD/ITO p-n junction based Photodetector;2020 5th IEEE International Conference on Emerging Electronics (ICEE);2020-11-26
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