A Systematic Study on the Hysteresis Behaviour and Reliability of MoS2 FET
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/7880094/7884715/07884816.pdf?arnumber=7884816
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Low‐frequency noise model development of MoS2 field effect transistor and its analysis with respect to different traps;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-12-12
2. Performance Analysis of Hetero-dielectric-Based MoS2 FET with Respect to Different Channel Lengths and High K-Values for Dielectric-Modulated Biosensor Application;Brazilian Journal of Physics;2023-03-17
3. Asymmetric Joule heating effect on a monolayer MoS2 device measured by a thermal imaging microscope;Journal of the Korean Physical Society;2022-03-04
4. Rapid Four-Point Sweeping Method to Investigate Hysteresis of MoS2 FET;IEEE Electron Device Letters;2020-09
5. Ultrafast Characterization of Hole Trapping Near Black Phosphorus–SiO2 Interface During NBTI Stress in 2-D BP p-FETs;IEEE Transactions on Electron Devices;2019-11
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