A 32-bank 1 Gb self-strobing synchronous DRAM with 1 GByte/s bandwidth-Reference-Cited by-同舟云学术

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A 32-bank 1 Gb self-strobing synchronous DRAM with 1 GByte/s bandwidth

Published:1996-11 Issue:11 Volume:31 Page:1635-1644
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Jei-Hwan Yoo ,Ejaz Haq ,Sang-Bo Lee ,Jai-Hoon Sim ,Joung-Ho Kim ,Byung-Sik Moon ,Keum-Yong Kim ,Jae-Gwan Park ,Kyu-Phil Lee ,Kang-Yoon Lee ,Ki-Nam Kim ,Chang-Hyun Kim ,Soo-In Cho ,Jong-Woo Park ,Hyung-Kyu Lim ,Kyu-Chan Lee ,Kye-Hyun Kyung ,Seung-Moon Yoo ,Jung-Hwa Lee ,Moon-Hae Son ,Jin-Man Han ,Bok-Moon Kang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx4/4/11741/00542308.pdf?arnumber=542308

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4. Accurate Conjunction of Yield Models for Fault-Tolerant Memory Integrated Circuits;IEEE Transactions on Semiconductor Manufacturing;2009-08

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