Reliability of CMOS-SOI power amplifiers for millimeter-wave 5G: the case for pMOS (Invited)
Author:
Affiliation:
1. University of California, San Diego,Dept. of Electrical and Computer Engineering,San Diego,CA,USA
2. University of California, San Diego,Qualcomm Institute,San Diego,CA,USA
3. IQ-Analog, Inc.,San Diego,CA,USA
4. Qualcomm, Inc.,San Diego,CA,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764417.pdf?arnumber=9764417
Reference26 articles.
1. High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography
2. A highly rugged 19 dBm 28GHz PA using novel PAFET device in 45RFSOI technology achieving peak efficiency above 48%
3. Novel mmWave NMOS Device for High Pout mmWave Power Amplifiers in 45RFSOI
4. The energy-driven paradigm of NMOSFET hot-carrier effects
5. Role of E-E scattering in the enhancement of channel hot carrier degradation of deep-submicron NMOSFETs at high V/sub GS/ conditions
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Reliability Considerations for 5G and 6G Phased Arrays;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
2. A compact 27 dBm triple-stack power amplifier for 13 GHz operation in CMOS-SOI;2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR);2024-01-21
3. Temperature-Dependent Study of Large-Signal Reliability of p-FET-Based Power Amplifier for mmWave Applications;IEEE Transactions on Device and Materials Reliability;2023-09
4. Integrated Circuits for Wireless Communications: Research Activities at the University of California, San Diego: Circuits Research for Wireless Communications at the University of California, San Diego;IEEE Microwave Magazine;2023-05
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