Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress-Reference-Cited by-同舟云学术

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Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress

Published:2022-03 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Lee Kookjin¹,Kaczer Ben²,Kruv Anastasiia¹,Gonzalez Mario²,Eneman Geert²,Okudur Oguzhan Orkut²,Grill Alexander²,Franco Jacopo²,Vici Andrea²,Degraeve Robin²,De Wolf Ingrid¹

Affiliation:

1. KU Leuven,Department of Materials Science,Leuven,Belgium,3001

2. Imec,Leuven,Belgium,3001

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764540.pdf?arnumber=9764540

Reference16 articles.

1. 3D integration technology and reliability challenges

2. Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

3. Model for defect generation at the (1 0 0)Si/SiO2 interface during electron injection in MOS structures

4. On the impact of mechanical stress on gate oxide trapping

5. Extraction of elastic modulus of porous ultra-thin low-k films by two-dimensional finite-element simulations of nanoindentation

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Externally Induced Local Mechanical Stress on Electrical Performance of Decananometer MOSFETs;IEEE Transactions on Electron Devices;2022-09

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