Analysis on the Performance of CNTFET Devices Based on the Impact of CNT Diameter Variation
Author:
Affiliation:
1. College of Engineering Universiti Teknologi MARA,School of Electrical Engineering,Selangor,Malaysia
2. Universiti Teknologi Malaysia,School of Electrical Engineering, Faculty of Engineering,Johor Bahru,Malaysia
Funder
Ministry of Higher Education
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9989539/9990040/09990297.pdf?arnumber=9990297
Reference17 articles.
1. The Impact of Variation in Diameter and Dielectric Materials of the CNT Field-Effect Transistor
2. Full Adder Circuit Using CNTFET;popuri;no August,2015
3. Characterizing the Carbon Nanotube Field Effect Transistor: A Geometric Variation Study
4. Compact model for ballistic single wall CNTFET under quantum capacitance limit
5. Comparative study of leakage power in CNTFET over MOSFET device
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