A comparison of neutron-induced SEU rates in Si and GaAs devices-Reference-Cited by-同舟云学术

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A comparison of neutron-induced SEU rates in Si and GaAs devices

Published:1988 Issue:6 Volume:35 Page:1634-1637
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Tsao C.H.,Silberberg R.,Letaw J.R.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx1/23/964/00025511.pdf?arnumber=25511

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