Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with composite channels and f/sub max/ of 350 GHz-Reference-Cited by-同舟云学术

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Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with composite channels and f/sub max/ of 350 GHz

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Container-title:Seventh International Conference on Indium Phosphide and Related Materials
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Author:

Chertouk M.,Heiss H.,Xu D.,Kraus S.,Klein W.,Bohm G.,Trankle G.,Weimann G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/3908/11338/00522249.pdf?arnumber=522249

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review;Microelectronics Journal;2019-10

2. Comparative Study on Breakdown Characteristics for InGaAs Metamorphic High Electron Mobility Transistor and InGaAs/InP-Composite Channel Metamorphic High Electron Mobility Transistor;IEICE Transactions on Electronics;2006-05-01

3. Output conductance dispersion and drain current transients in InP-HFETs: observations and equivalent circuit model;Solid-State Electronics;2000-09

4. A physical model for the kink effect in InAlAs/InGaAs HEMTs;IEEE Transactions on Electron Devices;2000-05

5. Simulation of InAlAs/InGaAs high electron mobility transistors with a single set of physical parameters;International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138);2000

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