Modification of Early Effect for 28-nm nMOSFETs Deposited With HfZrO<sub><italic>x</italic></sub> Dielectric After DPN Process Accompanying Nitrogen Concentrations-Reference-Cited by-同舟云学术

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Modification of Early Effect for 28-nm nMOSFETs Deposited With HfZrO_x Dielectric After DPN Process Accompanying Nitrogen Concentrations

Published:2014-12 Issue:12 Volume:42 Page:3747-3750
ISSN:0093-3813
Container-title:IEEE Transactions on Plasma Science
language:
Short-container-title:IEEE Trans. Plasma Sci.

Author:

Lee Win-Der,Wang Mu-Chun,Wang Shea-Jue,Lan Wen-How,Li Chao-Wang,Yang Bor-Wen

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Condensed Matter Physics,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/27/6978074/06908019.pdf?arnumber=6908019

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