Modeling and Simulation of DG SOI N FinFET 10 nm using Hafnium Oxide-Reference-Cited by-同舟云学术

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Modeling and Simulation of DG SOI N FinFET 10 nm using Hafnium Oxide

Published:2021-07-28 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE 21st International Conference on Nanotechnology (NANO)
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Author:

Lazzaz A.,Bousbahi K.,Ghamnia M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9513982/9514270/09514308.pdf?arnumber=9514308

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design, Analysis and Optimization of CMOS Full Adder Based FinFET 10 nm;2023 13th International Symposium on Advanced Topics in Electrical Engineering (ATEE);2023-03-23

2. Comparative analysis of TG FinFET and GAA FinFET in 3 nm technology node;2023 27th International Conference on Information Technology (IT);2023-02-15

3. Performance analysis of FinFET based inverter, NAND and NOR circuits at 10 NM,7 NM and 5 NM node technologies;Facta universitatis - series: Electronics and Energetics;2023

4. A Comprehensive Review on FinFET in Terms of its Device Structure and Performance Matrices;Silicon;2022-05-14

5. Optimized mathematical model of experimental characteristics of 14 nm TG N FinFET;Micro and Nanostructures;2022-05

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