Recombination lifetime profiling in very thin Si epitaxial layers used for bipolar VLSI-Reference-Cited by-同舟云学术

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Recombination lifetime profiling in very thin Si epitaxial layers used for bipolar VLSI

Published:1989-01 Issue:1 Volume:10 Page:23-24
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Spirito P.,Bellone S.,Ransom C.M.,Busatto G.,Cocorullo G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/1375/00031669.pdf?arnumber=31669

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Analytical Model of an OCVD-Based Measurement Technique of the Local Carrier Lifetime;IEEE Transactions on Electron Devices;2007-11

2. Electrical measurement of the lattice damage induced by -particle implantation in silicon;Vacuum;2005-05

3. Characterization of Recombination Centers in Si Epilayers After He Implantation by Direct Measurement of Local Lifetime Distribution With the AC Lifetime Profiling Technique;IEEE Electron Device Letters;2004-09

4. Response to “Comment on ‘Minority Carrier Lifetime Measurements in Epitaxial Silicon Layers’” [T. Hara, F. Tamura, and T. Kitamura (pp. L54–L57, Vol. 144, No. 4, 1997)];Journal of The Electrochemical Society;1998-06-01

5. Interferometric measurement of electron-hole pair recombination lifetime as a function of the injection level;IEEE Electron Device Letters;1993-10

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