Physical Design of 6T Cell of SRAM Devices and Comparative Analysis of Layout
Author:
Affiliation:
1. Synopsys Armenia CJSC,Yerevan,Armenia
2. National Polytechnic University of Armenia,Yerevan,Armenia
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10296971/10297023/10297065.pdf?arnumber=10297065
Reference10 articles.
1. Design Principles of SRAM Memory in Nano-CMOS Technologies;apollos;International Journal of Computer Applications,2019
2. Effectiveness of adaptive supply voltage and body bias as post-silicon variability compensation techniques for full-swing and low-swing on-chip communication channels
3. Design and evaluation of 6T SRAM layout designs at modern nanoscale CMOS processes;balobas;4th International Conference on Modern Circuits and System Technologies,0
4. Minimizing and Exploiting Leakage in VLSI Design
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3