Silicon Carbide Pillar Lattice for Controlling the Spontaneous Emission of Embedded Color Centers
Author:
Affiliation:
1. Department of Physics, Aligarh Muslim University, Aligarh, India
2. Department of Physics, Indian Institute of Technology Ropar, Punjab, India
3. School of Engineering, RMIT University, Melbourne, Victoria, Australia
Funder
Department of Science and Technology, India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx7/50/10380232/10264102.pdf?arnumber=10264102
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1. A review on single photon sources in silicon carbide;Lohrmann,2017
2. Quantum technologies with optically interfaced solid-state spins
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4. Five-second coherence of a single spin with single-shot readout in silicon carbide
5. Locking of electron spin coherence above 20 ms in natural silicon carbide
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1. Controlling the spontaneous emission of the telecom O-band centers in Silicon-on-Insulator with coherent dipole-quadrupole interactions on a silicon pillar lattice;Journal of Luminescence;2025-01
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