4×100Gb/s PAM4 Multi-Channel Silicon Photonic Chipset With Hybrid Integration of III-V DFB Lasers and Electro-Absorption Modulators

Author:

Levy Jacob S.1,Timurdogan Erman1,Kuo Yu-Sheng1,Lyu Gap Youl1,Tsai Charles1,Yan Xuejin1,Kim Harqkyun1,Stagarescu Cristian1,Meneou Kevin1,Thomas Abu1,Fragkos Ioannis1,Sitwell Geoffrey1,Trita Andrea1ORCID,Liu Yangyang1,Ziebel Melissa1,Byrd Jerry1,Steinbach Sven2,Chou Bruce1,Vis William1,Abed Arin1,Kwon Young1,Nykänen Henri3,Lo Shih-Han2,Ikonen Janne2,Larismaa Juha3,Drake John2,Benzoni Albert1,Minkenberg Cyriel2,Schrans Thomas1ORCID,Rickman Andrew2

Affiliation:

1. Rockley Photonics Inc., Pasadena, CA, USA

2. Rockley Photonics Ltd., Newport, U.K.

3. Rockley Photonics Oy, Espoo, Finland

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Atomic and Molecular Physics, and Optics

Reference24 articles.

1. 60 Gb/s waveguide-coupled O-band GeSi quantum-confined Stark effect electro-absorption modulator;srinivasan;Proc IEEE Opt Fiber Commun Conf Exhib,0

2. High efficiency grating coupler for 3 $\mu$m SOI waveguides;levy;Proc IEEE 9th Int Conf Group IV Photon,0

3. High-performance Ge-on-Si photodetectors

4. High-speed receiver technology on the SOI platform;feng;IEEE J Sel Topics Quantum Electron,2013

5. 4 × 56 Gb/s High Output Power Electroabsorption Modulated Laser Array With up to 7 km Fiber Transmission in L-Band

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