Uncooled 100-GBaud Directly Modulated Membrane Lasers on SiC Substrate-Reference-Cited by-同舟云学术

Uncooled 100-GBaud Directly Modulated Membrane Lasers on SiC Substrate

Published:2023-06-01 Issue:11 Volume:41 Page:3389-3396
ISSN:0733-8724
Container-title:Journal of Lightwave Technology
language:
Short-container-title:J. Lightwave Technol.

Author:

Yamaoka Suguru¹^ORCID,Diamantopoulos Nikolaos-Panteleimon Pandelis¹^ORCID,Nishi Hidetaka¹,Fujii Takuro¹^ORCID,Takeda Koji¹^ORCID,Hiraki Tatsurou¹^ORCID,Kanazawa Shigeru¹^ORCID,Kakitsuka Takaaki¹^ORCID,Matsuo Shinji¹^ORCID

Affiliation:

1. NTT Device Technology Labs, NTT Corporation, Atsugi-shi, Kanagawa, Japan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/50/10146346/10025553.pdf?arnumber=10025553

Reference29 articles.

1. 200G per lane for future 800G & 1.6T modules,2021

2. 50-Gbps Direct Modulation using 1.3-μm AlGaInAs MQW Distribute-Reflector Lasers

3. 50-Gb/s Direct Modulation of a 1.3-μm InGaAlAs-Based DFB Laser With a Ridge Waveguide Structure

4. Direct Modulation at 56 and 50 Gb/s of 1.3- $\mu $ m InGaAlAs Ridge-Shaped-BH DFB Lasers

5. Wide-Temperature-Range (25–80 °C) 53-Gbaud PAM4 (106-Gb/s) Operation of 1.3-μm Directly Modulated DFB Lasers for 10-km Transmission

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