Current Balancing of Parallel-Connected SiC devices using Active Gate Control

Author:

Tripathi Ravi Nath1

Affiliation:

1. Kyoto University of Advanced Science,Nagamori Actuator Research Center,Japan

Funder

Japan Society for the Promotion of Science

Publisher

IEEE

Reference11 articles.

1. Dynamic Characteristics Analysis of 3300V full SiC Power Module by new equivalent circuit;hatsukawa;Sei technical review Sumitomo electric,2016

2. SiC power devices: Innovative Power devices for a sustainable future;Mitsubishi Electric,2017

3. Dynamic current balancing of parallel connected IGBT devices using PCB sensors for integration in power modules;tripathi;International Conference on Integration of Power Electronics Systems (CIPS),2020

4. Characterization of SiC power module for high switching frequency operation

5. Peak minimisation based gate delay compensation for active current balancing of parallel IGBT system

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