Active Gate Drive Circuit with Auxiliary Drive Branch for SiC MOSFET
Author:
Affiliation:
1. Harbin Institue of Technology,School of Electrical Engineering and Automation,Harbin,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9982721/9982797/09983155.pdf?arnumber=9983155
Reference18 articles.
1. Oscillation of Power Circuit of Full SiC Auxiliary Converter[J];baowei;Transactions of China Electrotechnical Society,2021
2. Modeling and Influencing Factor Analysis of SiC MOSFET Half-Bridge Circuit Switching Transient Overcurrent and Overvoltage[J];lina;Transactions of China Electrotechnical Society,2020
3. Layout-Dominated Dynamic Current Imbalance in Multichip Power Module: Mechanism Modeling and Comparative Evaluation
4. Layout-Dominated Dynamic Imbalanced Current Analysis and Its Suppression Strategy of Parallel SiC MOSFETs
5. Review of Active Gate Driver for SiC MOSFET with Switching Trajectory Optimization[J];ning;Transactions of China Electrotechnical Society,2022
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