Characterization, Modeling, and Compensation of the Dynamic Self-Biasing Behavior of GaN HEMT-Based Power Amplifiers-Reference-Cited by-同舟云学术

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Characterization, Modeling, and Compensation of the Dynamic Self-Biasing Behavior of GaN HEMT-Based Power Amplifiers

Published:2021-01 Issue:1 Volume:69 Page:529-540
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Tome Pedro M.^ORCID,Barradas Filipe M.^ORCID,Nunes Luis C.^ORCID,Gomes Joao L.^ORCID,Cunha Telmo R.^ORCID,Pedro Jose C.^ORCID

Funder

Fundação para a Ciência e a Tecnologia (FCT)/Ministério da Educação e Ciência (MEC) through the National Funds

FCT/MEC

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/9314312/09141356.pdf?arnumber=9141356

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Generalized Theory and Design Methodology of Broadband Outphasing Power Amplifiers Employing Low-Order Bandpass Networks;IEEE Transactions on Microwave Theory and Techniques;2024-08

2. Efficiency Enhancement Technique for Outphasing Amplifier With Extended Power Back-Off Range;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-06

3. A 18-to-22 GHz 22.8 dBm P_SAT 18.2 dB Gain Power Amplifier in 0.13-μm CMOS SOI;2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM);2024-05-20

4. Behavioral-level modelling of GaN HEMT large signal based on Pelican-Gaussian process regression algorithm;Microelectronics Journal;2024-01

5. Isothermal Characterization of Traps in GaN HEMTs Operating in Class B Using a Real-Time Pulsed-RF NVNA Testbed;IEEE Transactions on Microwave Theory and Techniques;2024

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