Characterization, Modeling, and Compensation of the Dynamic Self-Biasing Behavior of GaN HEMT-Based Power Amplifiers

Author:

Tome Pedro M.ORCID,Barradas Filipe M.ORCID,Nunes Luis C.ORCID,Gomes Joao L.ORCID,Cunha Telmo R.ORCID,Pedro Jose C.ORCID

Funder

Fundação para a Ciência e a Tecnologia (FCT)/Ministério da Educação e Ciência (MEC) through the National Funds

FCT/MEC

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Behavioral-level modelling of GaN HEMT large signal based on Pelican-Gaussian process regression algorithm;Microelectronics Journal;2024-01

2. A 33 dBm, >30% PAE GaN Power Amplifier Based on a Sub-Quarter-Wavelength Balun for 5G Applications;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

3. Comparative analysis of nonlinear behavioral models for GaN HEMTs based on machine learning techniques;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-09-29

4. A Differential GaN Power Amplifier with <1° AM-PM Distortion for 5G mm-wave Applications;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

5. A Compact K-band, Asymmetric Coupler-based, Switchless Transmit-Receive Front-End in 0.15μm GaN-on-SiC Technology;ESSCIRC 2023- IEEE 49th European Solid State Circuits Conference (ESSCIRC);2023-09-11

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