Integration of Silicon-Carbide Schottky Diodes with High-Frequency Transformer-Reference-Cited by-同舟云学术

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Integration of Silicon-Carbide Schottky Diodes with High-Frequency Transformer

Published:2022-11-20 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE PES 14th Asia-Pacific Power and Energy Engineering Conference (APPEEC)
language:
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Author:

Yao Weichong¹,Parveen Tania²,Lu Junwei¹,Seagar Andrew²,Bai Feifei¹,Taghizadeh Foad³

Affiliation:

1. School of Engineering and Built Environment, Griffith University,Brisbane,QLD,Australia

2. School of Engineering and Built Environment, Griffith University,Gold Coast,QLD,Australia

3. School of Engineering, Macquarie University,Sydney,NSW,Australia

Funder

ARC Discovery

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10072006/10072029/10072147.pdf?arnumber=10072147

Reference10 articles.

1. Core loss behavior in high frequency high power transformers—I: Effect of core topology

2. Comparative Study of a Multi-MW High-Power Density DC Transformer With an Optimized High-Frequency Magnetics in All-DC Offshore Wind Farm

3. Characterizations of High Frequency Planar Transformer With a Novel Comb-Shaped Shield

4. A Bidirectional Isolated DC–DC Converter as a Core Circuit of the Next-Generation Medium-Voltage Power Conversion System

5. The Smart Transformer: Impact on the Electric Grid and Technology Challenges

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