Dependence of intrinsic performance of transition metal dichalcogenide transistors on materials and number of layers at the 5 nm channel-length limit-Reference-Cited by-同舟云学术

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Dependence of intrinsic performance of transition metal dichalcogenide transistors on materials and number of layers at the 5 nm channel-length limit

Published:2013-12 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Electron Devices Meeting
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Author:

Mishra Varun,Smith Samuel,Ganapathi Kartik,Salahuddin Sayeef

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6709840/6724533/06724569.pdf?arnumber=6724569

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