10×10nm<sup>2</sup> Hf/HfO<inf>x</inf> crossbar resistive RAM with excellent performance, reliability and low-energy operation-Reference-Cited by-同舟云学术

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10×10nm² Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation

Published:2011-12 Issue: Volume: Page:
ISSN:
Container-title:2011 International Electron Devices Meeting
language:
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Author:

Govoreanu B.,Kar G.S.,Chen Y-Y.,Paraschiv V.,Kubicek S.,Fantini A.,Radu I.P.,Goux L.,Clima S.,Degraeve R.,Jossart N.,Richard O.,Vandeweyer T.,Seo K.,Hendrickx P.,Pourtois G.,Bender H.,Altimime L.,Wouters D.J.,Kittl J.A.,Jurczak M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6123666/6131464/06131652.pdf?arnumber=6131652

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