Single Event Upset Testing Method of Spin-Orbit Torque Magnetic Storage Array-Reference-Cited by-同舟云学术

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Single Event Upset Testing Method of Spin-Orbit Torque Magnetic Storage Array

Published:2023-12-15 Issue: Volume:155 Page:189-194
ISSN:
Container-title:2023 IEEE 6th International Conference on Automation, Electronics and Electrical Engineering (AUTEEE)
language:
Short-container-title:

Author:

Jin Hui¹,Wang Bi²,Li Jiaqiang³,Li Pengbin²,Liu Sijia²,Yu Anyang²

Affiliation:

1. Beihang University,School of Electronics and Information Engineering,Beijing,China,100191

2. Beihang University,School of Integrated Circuit Science and Engineering,Beijing,China,100191

3. Beijing Institute of Remote Sensing Equipment,Beijing,China,100089

Funder

Beijing Municipal Natural Science Foundation

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10406305/10407125/10407509.pdf?arnumber=10407509

Reference18 articles.

1. Single event transients in a 0.18 m partially-depleted silicon-on-insulator complementary metal oxide semiconductor circuit

2. Numerical simulation of single-event-transient effects on ultra-thin-body fully-depleted silicon-on-insulator transistor based on 22 nm process node

3. A scaleable, radiation hardened shallow trench isolation

4. Comparison of ionizing radiation effects in 0.18 and 0.25 /spl mu/m CMOS technologies for analog applications

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